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| EIC7177-10 7.10-7.70 GHz 10-Watt Internally-Matched Power FET FEATURES * * * * * * * * 7.10 - 7.70 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 9 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at Po = 29.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC7177-10 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics' unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.10-7.70GHz VDS = 10 V, IDSQ 3200mA Gain at 1dB Compression f = 7.10-7.70GHz VDS = 10 V, IDSQ 3200mA Gain Flatness f = 7.10-7.70GHz VDS = 10 V, IDSQ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 3200mA f = 7.10-7.70GHz Drain Current at 1Db Compression f = 7.10-7.70GHz Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L VDS = 10 V, IDSQ 65% IDSS f = 7.70 GHz MIN 39.5 8.0 TYP 40.5 9.0 MAX UNITS dBm dB 0.6 35 3200 -43 -46 5800 -2.5 2.5 6400 -4.0 3.0 o dB % 3600 mA dBc mA V C/W Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA Notes: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised October 2003 EIC7177-10 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE 10 V -4.5 V IDSS 120 mA @ 3dB compression 42 W 150C -65/+150C Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN). PERFORMANCE DATA Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ 3200mA S11 and S22 0. 6 Swp Max 7.9GHz 2. 0 1.0 10 0. 8 S21 and S12 S21 and S12 (dB) 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 -0.8 FREQ (GHz) --- S11 --MAG ANG -1.0 S[2,2] EIC7177-10 .6 .0 -2 -0 6.5 6.7 6.9 7.1 7.3 7.5 7.7 7.9 8.1 8.3 8.5 0.7175 0.6394 0.54 0.4059 0.2293 0.0747 0.2466 0.4397 0.583 0.6761 0.7392 -118.04 -138.29 -161.16 172.55 138.08 37.07 -62.75 -98.59 -126.77 -150.57 -171.1 2.3853 2.5751 2.7688 2.9473 3.0573 3.0519 2.8762 2.5317 2.1134 1.7287 1.3981 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -3 S[1,1].4 -0 EIC7177-10 -4 .0 -5.0 2 -0 . Swp Min 6.9GHz --- S21 --MAG ANG -10. 0 .0 0. 4 3. 0 4. 0.2 0 5.0 0 10.0 DB(|S[2,1]|) EIC7177-10 -10 DB(|S[1,2]|) EIC7177-10 -20 6.9 7.1 7.3 7.5 Frequency (GHz) 7.7 7.9 --- S12 --MAG ANG --- S22 --MAG ANG -7.81 -32.99 -59.03 -86.83 -116.9 -148.09 179.32 147.48 117.67 91.05 66.41 0.0894 0.0982 0.1091 0.1214 0.1304 0.135 0.1302 0.1164 0.0983 0.0833 0.0708 -64.67 -88.45 -114.52 -141.21 -170.74 158.19 126.14 95.19 66.91 40.52 18.29 0.3979 0.4476 0.4847 0.4996 0.4755 0.4083 0.3168 0.261 0.2876 0.3632 0.4355 134.6 105.78 78.66 51.55 22.06 -11.96 -54.79 -109.71 -160.97 165.41 143.08 page 2 of 4 Revised October 2003 EIC7177-10 Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature 48 42 Total Power Dissipation (W) 36 30 24 18 12 6 0 0 25 50 75 100 Case Temperature (C) 125 150 Pin [S.C.L.] (dBm) (2f2 - f1) or (2f1 - f2) THIRD-ORDER INTERCEPT POINT IP3 Pout [S.C.L.] (dBm) Potentially Unsafe Operating Region IP3 = Pout + IM3/2 f1 or f2 Pout Pin IM3 Safe Operating Region IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) Typical Power Data (VDS = 10 V, IDSQ = 3200 mA) 42 41 P-1dB (dBm) Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS) 12 11 10 9 8 P-1dB & G-1dB vs Frequency IM3 vs Output Power -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 24 25 26 27 f1 = 7.40 GHz, f2 = 7.41 GHz 40 39 38 P-1dB (dBm) 37 7.0 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 Frequency (GHz) IM3 (dBc) G-1dB (dB) G-1dB (dB) 7 IM3 (dBc) 28 29 30 31 32 33 34 35 36 Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised October 2003 EIC7177-10 PACKAGE OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified SOURCE EIC7177-10 YM Excelics SN ORDERING INFORMATION Part Number EIC7177-10 Notes: Grade1 Industrial fTest (GHz) 7.1-7.7 GHz P1dB (min) 39.5 IM3 (min)2 -43 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised October 2003 |
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